Samsung MZ-V9S1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
- Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing.
- Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work.
- Available in different capacities up to 4TB.
- Power efficient design puts less burden on your PC's battery life.
- Smart thermal solution provides consistent and reliable performance.
- Five year limited warranty.
| SKU | MZ-V9S1T0BW |
|---|---|
| EAN | 8806095575674 |
| Manufacturer | Samsung |
| Availability | Y |
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.
Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.
Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.
Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.
Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.
| Features | |
|---|---|
| Interface | PCI Express 4.0 |
| Component for | PC |
| SSD capacity | 1 TB |
| Read speed | 7150 MB/s |
| Write speed | 6300 MB/s |
| NVMe | Yes |
| NVMe version | 2.0 |
| DevSlp (device sleep) support | Yes |
| Memory type | V-NAND TLC |
| Random read (4KB) | 850000 IOPS |
| Random write (4KB) | 1350000 IOPS |
| Security algorithms | 256-bit AES |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Hardware encryption | Yes |
| Mean time between failures (MTBF) | 1500000 h |
| SSD form factor | M.2 |
| M.2 SSD size | 2280 (22 x 80 mm) |
| Power | |
| Operating voltage | 3.3 V |
| Average power consumption (write) | 4.2 W |
| Average power consumption (read) | 4.3 W |
| Performance | |
| Interface | PCI Express 4.0 |
| Component for | PC |
| SSD capacity | 1 TB |
| Read speed | 7150 MB/s |
| Write speed | 6300 MB/s |
| NVMe | Yes |
| NVMe version | 2.0 |
| DevSlp (device sleep) support | Yes |
| Memory type | V-NAND TLC |
| Random read (4KB) | 850000 IOPS |
| Random write (4KB) | 1350000 IOPS |
| Security algorithms | 256-bit AES |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Hardware encryption | Yes |
| Mean time between failures (MTBF) | 1500000 h |
| Design | |
|---|---|
| SSD form factor | M.2 |
| Weight & dimensions | |
| Width | 80.2 mm |
| Depth | 2.38 mm |
| Height | 22.1 mm |
| Weight | 9 g |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
| Technical details | |
| Interface | PCI Express 4.0 |
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
| SSD form factor | M.2 |
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|---|---|---|---|---|---|---|
| SKU |
MZ-V9S1T0BW
|
MZ-V7S1T0BW
|
CT2000BX500SSD1
|
SKC600/1024G
|
MZ-77Q1T0BW
|
MZ-77E1T0BW
|
| Manufacturer |
Samsung
|
Samsung
|
Crucial
|
Kingston Technology
|
Samsung
|
Samsung
|
| Interface |
PCI Express 4.0
|
PCI Express 3.0
|
Serial ATA III
|
Serial ATA III
|
Serial ATA III
|
Serial ATA III
|
| Memory type |
V-NAND TLC
|
V-NAND MLC
|
3D NAND
|
3D TLC
|
QLC
|
V-NAND MLC
|
| SSD capacity |
800GB to 1000GB
|
800GB to 1000GB
|
1200GB to 2000GB
|
1000GB to 1200GB
|
800GB to 1000GB
|
800GB to 1000GB
|
| Component for |
PC
|
PC
|
Notebook
|
PC/notebook
|
PC/notebook
|
PC
|
| SSD form factor |
M.2
|
M.2
|
2.5"
|
2.5"
|
2.5"
|
2.5"
|